Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

517
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
517

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Tunable resonant metasurfaces enabled by atomically thin semiconductors.

Light, science & applications·2026
Same author

Holographic lasing with dielectric metasurfaces.

Science advances·2026
Same author

Valley-Dependent Emission Patterns Enabled by Plasmonic Nanoantennas.

ACS nano·2026
Same author

Spatio-spectrally Tailored Multimode Metasurface Lasers in the Visible Range.

Nano letters·2026
Same author

Room-temperature polariton condensate in a quasi-2D hybrid perovskite.

Nature communications·2026
Same author

Tuning relaxation and nonlinear upconversion of valley-exciton-polaritons in a monolayer semiconductor.

Nature communications·2025

相关实验视频

Updated: Jun 5, 2025

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
09:33

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Published on: June 7, 2019

6.2K

在单质化元表面中产生第二次波.

Muyi Yang1,2,3, Maximilian A Weissflog2,3, Zlata Fedorova1,2

  • 1Institute of Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena, Germany.

Nanophotonics (Berlin, Germany)
|December 5, 2024
PubMed
概括

研究人员开发了一种单质化 (GaP) 超表面,用于增强非线性纳米光子学. 这些结构为像第二波 (SHG) 等应用提供了薄膜设计的简单,可访问的替代方案.

关键词:
化的化是的化物.纳米制造的纳米制造非线性元面是指非线性元面.第二个波的第二代波.

更多相关视频

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

5.7K
Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
10:54

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

14.8K

相关实验视频

Last Updated: Jun 5, 2025

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
09:33

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Published on: June 7, 2019

6.2K
Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

5.7K
Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
10:54

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

14.8K

科学领域:

  • 非线性光学是一种非线性光学.
  • 量子纳米光子学 量子纳米光子学
  • 材料科学是一种材料科学.

背景情况:

  • 化 (GaP) 具有广泛的透明度范围和高非线性灵敏度,非常适合纳米光子学.
  • 低指数基板上单晶GaP薄膜的有限可用性阻碍了非线性介电元表面制造.
  • 定制非线性反应需要特定的晶体定向,这给制造带来了挑战.

研究的目的:

  • 为增强和定制的第二波生成 (SHG) 设计和实验实现单质的GaP超表面.
  • 为现有的薄膜超表面设计提供一种简单且广泛可用的替代方案.
  • 为了研究单一的GaP超表面的SHG性能和排放特性.

主要方法:

  • 从散装 (110) GaP晶圆制造单体GaP元表面.
  • 利用电子束光刻和优化的感应合等离子蚀刻,没有硬面具.
  • 使用SHG测量和非线性反焦平面成像来表征非线性性能.

主要成果:

  • 实现高近红外到可见 (NIR-to-visible) 转换效率高达10−5,相当于III-V半导体薄膜元表面.
  • 通过控制晶体方向和超表面设计,证明了定制的SHG.
  • 观察到第二波光的显著发射到光轴上的零衍射顺序.

结论:

  • 单体GaP超表面为非线性纳米光子学提供了薄膜设计的可行和可访问的替代方案.
  • 开发的制造工艺使高效和可定制的非线性光学响应成为可能.
  • 这些发现为量子和非线性光学应用中的基于GaP的设备开辟了新的途径.