辐射和外接的表面格子共振绿色 LEDs 排放LED
Mohamed S Abdelkhalik1, Aleksandr Vaskin1, Toni López2
1Department of Applied Physics and Science Education, and Eindhoven Hendrik Casimir Institute, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
Nanophotonics (Berlin, Germany)
|December 5, 2024
概括
研究人员为化 (InGaN) 发光二极管 (LED) 开发了等离子金属表面. 这项创新可以控制光线的方向,并将效率提高5倍,消除了对二次光学的需求.
科学领域:
- 光电学是指光电子产品.
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 发光二极管 (LED) 通常具有兰伯特发射,需要二次光学来控制特定应用的光.
- 定制LED排放对于优化各种应用中的性能至关重要.
研究的目的:
- 为了在LED的InGaN量子井中引入等离子金属表面.
- 为了控制远场辐射的方向性,并提高光收集效率.
主要方法:
- 通过InGaN多个量子井 (MQW) 和 (Al) 纳米盘阵列之间的近场合利用了表面晶格共振 (SLR).
- 采用富里埃显微镜来分析角光发光发射模式.
- 根据互惠原则进行数值计算.
主要成果:
- 证明了角光发光的发射模式是可调整的,由 metasurface 格子常数.
- 通过整合Al元表面,通过集成的外联光强度实现了5倍的增强.
- 数字计算显示出与实验数据的良好一致.
结论:
- 等离子元表面有效地控制LED发射方向,没有二次光学.
- 这种方法避免了GaN的后蚀刻,提供了一种可行的方法来增强微型LED中的光产生.
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