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Updated: Jun 20, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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在少数层1T-TaS2中对金属绝缘体过渡进行纳米红外成像

Songtian S Zhang1, Anjaly Rajendran2, Sang Hoon Chae3,4

  • 1Department of Physics, Columbia University, New York, NY 10027, USA.

Nanophotonics (Berlin, Germany)
|December 5, 2024
PubMed
概括

少数层的1T-TaS2表现出突然的金属到绝缘体过渡,保持相位歇斯底里. 这项研究揭示了准二维材料中明显的高温和低温相.

关键词:
阶段过渡 阶段过渡扫描近场光学显微镜.过渡金属二甲基二甲基化物

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...