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Updated: Jun 5, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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一个Bi2Se3拓绝缘器的光导率与一个THz透明的顶端门

Craig S Knox1,2, Matthew T Vaughan1, Nathan R Fox1

  • 1School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK.

Nanophotonics (Berlin, Germany)
|December 5, 2024
PubMed
概括

我们研究了拓绝缘体Bi2Se3,发现表面状态主导光导率. 门控制影响载体的移动性,这对于未来的等离子装置设计至关重要.

关键词:
THz时间域光谱学量子运输是一种量子运输.拓绝缘体 拓绝缘体 拓绝缘体

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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