集成PIN调制器和光电探测器在5.5μm至10μm的中红外范围工作
Thi Hao Nhi Nguyen1, Victor Turpaud1, Natnicha Koompai1
1Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France.
Nanophotonics (Berlin, Germany)
|December 5, 2024
概括
这项研究展示了第一个- (SiGe) 波导调制器和光探测器用于中红外光谱学. 该设备实现了高速运行和广泛的光谱范围,推进了集成光子应用.
科学领域:
- 光学和光电子学和光电子学.
- 中红外光谱学 中红外光谱学
- 半导体设备 半导体设备
背景情况:
- 集成光子学对于先进的光谱学至关重要.
- - (SiGe) 具有独特的光电子特性.
- 中红外 (MIR) 应用需要专门的调制器和探测器.
研究的目的:
- 为了实验证明第一个波导集成的SiGe调制器和光探测器.
- 描述其在MIR区域的广泛光谱范围内的表现.
- 评估其用于MIR光谱学的潜力.
主要方法:
- 制造一个集成波导的SiGe PIN二极管.
- 调制性能 (灭绝比,速度) 的实验性表征.
- 在MIR频谱中进行光检测特性 (响应性,带宽).
主要成果:
- 展示了第一个波导集成的SiGe调制器和光探测器.
- 在10微米波长下达到高达10dB的灭绝比率.
- 高速调制高达1.5 GHz,光检测带宽为32 MHz.
- 从5.2微米到10微米的内部响应率为~1mA/W.
结论:
- 开发的SiGe设备代表了集成MIR光子学的重大进步.
- 它对MIR光谱和传感中的应用非常有前途.
- 这项工作为新的MIR集成光子系统铺平了道路.
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