基于Bi2Te3的有缺陷的散装热电晶体的室温特殊可塑性
Tingting Deng1,2, Zhiqiang Gao3, Ze Li1,2,4
1State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China.
概括
研究人员通过使用抗体缺陷将易碎的胺半导体转化为塑料半导体. 这一突破使得高性能塑料半导体与脆性半导体相美,为新的功能材料打开了大门.
科学领域:
- 材料科学
- 固态物理
- 半导体物理
背景情况:
- 无机半导体的室温可塑性是一种具有新功能材料潜力的新特性.
- 现有的塑料半导体很少见,性能通常低于脆弱的同类产品.
- 基于 (Bi2Te3) 的材料是经典的易碎热电半导体.
研究的目的:
- 在将脆性半导体转化为塑料半导体的过程中,研究抗体缺陷的潜力.
- 增强土的机械性能和热电性能.
- 制定塑化易碎半导体的总体策略.
主要方法:
- 诱导散装化物 (Bi2Te3) 的抗缺陷.
- 描述由此产生的微观结构及其对机械性能的影响.
- 评估改性材料的热电功率 (zT).
主要成果:
- 在Bi2Te3中产生高密度,多样化的微观结构.
- 这些微结构成功地将易碎的Bi2Te3转化为塑料材料.
- 塑料Bi2Te3在300K时达到1.05的高功率 (zT),与脆性半导体相美.
结论:
- 抗现场缺陷是一种有效的策略,可以使脆弱的半导体具有可塑性.
- 塑料半导体可以表现出卓越的功能,与传统的脆性材料相竞争.
- 这项工作为开发具有卓越性能的新塑料功能材料铺平了道路.
更多相关视频
相关概念视频
Plastic Behavior
779
A material's elastic behavior is characterized by the disappearance of stress once the load is removed, allowing the material to return to its original state. However, when stress surpasses the yield point, yielding commences, marking the onset of plastic deformation or permanent set. This change from elastic to plastic behavior is influenced by the peak stress value and the duration before the load is removed. An intriguing observation occurs when a specimen is loaded, unloaded, and...
779
Temperature Dependent Deformation
669
In a nonhomogeneous rod made up of steel and brass, restrained at both ends and subjected to a temperature change, several steps are involved in calculating the stress and compressive load. Due to the problem's static indeterminacy, one end support is disconnected, allowing the rod to experience the temperature change freely. Next, an unknown force is applied at the free end, triggering deformations in the rod's steel and brass portions. These deformations are then calculated and added...
669
Imperfections in Crystal Structure: Point, Line and Plane Defects
103
A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
103
Imperfections in Crystal Structure: Stoichiometric Point Defects
91
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
91
Imperfections in Crystal Structure: Non-Stoichiometric Defects
91
Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
91


