用Cr,Mn和O合AlN的光学中心及其通过多级计算方法设计的热力学稳定性
Mubashir Mansoor1,2, Mehmet Ali Sarsil3, Mehya Mansoor1,4
1Metallurgical and Materials Engineering Department, Istanbul Technical University, 34469 Maslak, Istanbul, Turkey.
ACS applied materials & interfaces
|December 9, 2024
概括
本研究介绍了一种工作流程,用于控制化 (AlN) 晶体中的点缺陷. 它可以通过调整特定应用的生长条件来调整和等光学中心.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 计算材料科学科学 计算材料科学
背景情况:
- 化 (AlN) 的光学中心表现出复杂的电荷状态和与其他缺陷的相互作用.
- 控制特定的光学中心,同时抑制不必要的缺陷对于AlN应用至关重要.
研究的目的:
- 开发一个工程点缺陷在AlN晶体生长的工作流.
- 为了研究 (Cr), (Mn) 和氧 (O) 诱导的光学中心在AlN.
- 通过增长参数控制提供调整缺陷度和光学特征的方法.
主要方法:
- 将基于CALPHAD的相位分析与*ab initio*缺陷计算相结合.
- 作为过程参数 (例如,部分压力) 的函数,研究点缺陷形成.
- 计算电荷过渡水平和占主导地位的缺陷的光学特征.
主要成果:
- 随着的部分压力增加,CrAl和MnAl的缺陷占主导地位;的流动性调整光学特征强度.
- 计算的CrAl电荷过渡水平 (2.60 eV, 3.83 eV, 5.41 eV) 和相关的发光带 (2.82, 1.91, 3.15 eV).
- 在MnAl之后,Mn-VN是丰富的;ON-VAl缺陷产生近紫外线的辐射 (3.17,3.26,3.81 eV).
结论:
- 开发的工作流可以有效地预测和控制AlN的点缺陷.
- 增长条件,特别是气流动性,可以优化,以调整特定的光学中心.
- 结果与实验光学特征一致,为AlN的缺陷工程提供了途径.
相关概念视频
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