新兴非易失性内存技术在工业中的进展
Markus Hellenbrand1, Isabella Teck1, Judith L MacManus-Driscoll1
1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS UK.
MRS communications
|December 9, 2024
概括
新兴的非易失性内存 (eNVM) 正在半导体行业推进,其目标是取代闪存,DRAM和SRAM. 学术研究应专注于人工智能硬件应用,以实现开放式创新.
科学领域:
- 半导体行业 半导体行业 半导体行业
- 材料科学是一种材料科学.
- 设备工程 设备工程
背景情况:
- 新兴的非易失性内存 (eNVM) 技术在半导体行业正在迅速发展.
- eNVM旨在取代传统的内存技术,如嵌入式闪存,DRAM和SRAM.
- 了解工业环境对于指导学术研究至关重要.
研究的目的:
- 为学术研究人员提供关于 eNVM.
- 在eNVM中确定未来材料和设备开发的有前途的研究方向.
- 突出产业需求高的地区和那些开放于新型探索的地区.
主要方法:
- 预期业绩总结. 预期业绩总结.
- 最先进的技术审查.
- 行业趋势分析.
主要成果:
- 磁性和电阻式内存正在为嵌入式闪存更换引领eNVM,要求进行先进的研究.
- 阶段变换和铁电记忆在商业上不那么成熟.
- 人工智能硬件中的eNVM应用是一个重要的,开放的研究领域.
结论:
- 关于eNVM的学术研究应该与工业需求保持一致,特别是对于人工智能硬件.
- 需要进一步的创新来满足前沿的eNVM技术所设定的高标准.
- 探索新材料和设备架构对于未来的eNVM进步至关重要.
相关概念视频
01:25MOS Capacitor
707
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
707
01:16MOSFET
422
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
422