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原子层沉积Sn-化脱化物,用于低关电流的无As的Ovonic值开关

Byongwoo Park¹, Jeong Woo Jeon¹, Woohyun Kim¹

¹Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr.

Dalton transactions (Cambridge, England : 2003)

|December 9, 2024

概括

这项研究开发了无的Ovonic值开关 (OTS) 设备,使用添加基化 (SnGS2) 薄膜的原子层沉积 (ALD). 新的SnGS2膜显示了低停电和改善的门电压以及先进电子产品的耐用性.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

无毒的二化 (GeSe2) 薄膜在Ovonic门开关 (OTS) 设备中表现出局限性,包括高门电压和低耐久性,尽管由于大移动性差距而导致低离电流.
解决这些局限性对于开发高性能,可靠的OTS设备至关重要.

研究的目的:

为OTS设备提供无替代品,引入添加基化 (SnGS2) 薄膜的原子层沉积 (ALD).
在GeSe2薄膜中优化Sn注,以实现低间歇电流和理想的门电压和耐久性.

主要方法:

用添加的GeSe2 (SnGS2) 薄膜通过SnNx和GeSe2子循环的超循环使用原子层沉积 (ALD) 沉积.
在GeSe2次循环中与前体同时注射氨 (NH3),产生了活性H2Se中间体,促进了SnNx转化为SnSe2.
平面和垂直类型的OTS设备是使用ALD沉积的SnGS2膜制造的.

主要成果:

SnGS2膜保持了大约1:2的阴离子比,无形结构和光滑的表面形态.
一个9.6%Sn度的平面OTS装置表现出~3.5V的低值电压,~12.5nA的低静电电流,以及超过10^6周期的切换耐久性.
使用ALD的步骤覆盖制造的垂直类型OTS设备显示了与平面设备相似的切换特性.

结论:

原子层沉积Sn-doped GeSe2是制造高性能,无的Ovonic值开关设备的可行方法.
优化的SnGS2薄膜为电子内存和开关技术中的低停电,低值电压和高耐久性应用提供了有前途的解决方案.

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