转移稳定的以身体为中心的立方CoMnFe合金薄膜具有垂直的磁性异构性,用于自旋电子的存储器
Deepak Kumar1, Mio Ishibashi1, Tufan Roy2
1WPI Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.
Science and technology of advanced materials
|December 12, 2024
概括
研究人员发现了垂直磁性异构性 (PMA) 在转移稳定的体中心立方体 (bcc) CoMnFe薄膜中. 这些电影显示了先进的自旋电子记忆器件的前景,例如自旋转移扭矩磁电阻随机访问存储器 (STT-MRAM).
科学领域:
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 体中心立方体 (bcc) FeCo(B) 是垂直磁道连接 (p-MTJs) 的标准磁性材料,提供高道磁阻力 (TMR) 和垂直磁异构性 (PMA) 的MgO屏障.
- 垂直磁道连接 (p-MTJs) 对自旋电子记忆至关重要,例如自旋转移扭矩磁性随机访问记忆 (STT-MRAM),推动了对优质磁性材料的搜索.
研究的目的:
- 报告第一个垂直磁性异构性 (PMA) 在转变稳定的bcc Co基合金,特别是bcc CoMnFe薄膜中的第一次观察.
- 评估bcc CoMnFe/MgO作为FeCo(B) /MgO替代品的潜力,用于下一代自旋电子的内存应用.
主要方法:
- 制造金属稳定的bcc CoMnFe薄膜和多层.
- 实验测量了内在垂直磁性异构性 (PMA).
- Ab-initio计算以了解PMA的起源并预测改进.
- 对STT-MRAM数据保留的热稳定因子的模拟.
主要成果:
- 在转移稳定的bcc CoMnFe合金和多层薄膜中成功实现了垂直磁性异构性 (PMA).
- 测量的最大内在PMA约为合金薄膜的0.6 MJ/m3和多层薄膜的0.8 MJ/m3.
- Ab-initio计算表明,四边形菌株是PMA的来源,通过优化有可能超过1MJ/m3.
- 模拟的热稳定性因子符合X-1X nmSTT-MRAM数据保留的要求.
结论:
- 转移稳定的bcc CoMnFe薄膜表现出显著的PMA和TMR效应,与FeCo(B) /MgO.相似.
- Bcc CoMnFe/MgO为开发先进的X-1X nm STT-MRAM设备提供了一个有前途的替代材料系统.
- 进一步优化应变和合金组成可以提高PMA超出目前的实验值.
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