稳定氧空缺化学向高性能离子电池的分层氧化物阴极
Chen Cheng1, Zengqing Zhuo2, Xiao Xia1
1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123, China.
ACS nano
|December 12, 2024
概括
层层的过渡金属氧化物中的阳离子氧化还原可以导致氧空缺 (OV). 引入高价值Nb5+稳定了这些OV,增强了结构完整性和电化学性能,以更好地储存能量.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 固态化学 固态化学
背景情况:
- 层层的过渡金属 (TM) 氧化物中的阳离子氧化还原为正极提供高能量密度.
- 氧空缺 (OVs) 通常是由于阴离子氧化还原过程中不可逆转的氧气释放而形成的,影响性能.
- 固有OV和阳离子氧化还原介导OV都会影响材料特性,但它们的相互作用尚不清楚.
研究的目的:
- 在层层的TM氧化物中研究内在和阳离子氧化还原介导OV之间的关系.
- 了解内在OVs如何促进阳离子氧化还原介导OVs的生成和迁移.
- 制定稳定OV和提高电化学性能的战略.
主要方法:
- 研究了内在OVs在TM-O框架完整性和OV迁移途径中的作用.
- 提出并实施了使用高价值Nb5+兴奋剂的OV稳定策略.
- 评估了Nb5+对结构稳定性和电化学性能的影响.
主要成果:
- 内在的OV削弱了TM-O框架,促进了阳离子氧化还原介导的OV形成和迁移.
- Nb5+兴奋剂有效地定氧子网,抑制OV迁移和形成.
- 拟议的策略导致了优良的结构完整性和增强的可逆阴离子氧化还原化学.
结论:
- 在层层的TM氧化物中,内在和阳离子氧化还原介导的OV之间存在关键的相互作用.
- 通过Nb5+兴奋剂等策略稳定OVs对于高性能能量存储至关重要.
- 这项工作为使用离子氧化还原的先进阴极材料控制OV动态提供了洞察力.
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