铁弹性域切换和时间解析负电容性在极轴导向的Hf0.5Zr0.5O2中,由原子层Epitaxy生长
Yu-Sen Jiang1, Wei-En Lin2, Makoto Shiojiri3
1Department of Materials Science and Engineering, National Taiwan University, Taipei, 106319, Taiwan.
Small (Weinheim an der Bergstrasse, Germany)
|December 16, 2024
概括
高极轴导向的 hafnium氧化物 (Hf0.5Zr0.5O2) 通过原子层表层生长的薄膜表现出异常的铁电极化. 这一突破为铁电域切换和负电容效应提供了新的见解.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术 纳米技术
背景情况:
- Hf0.5Zr0.5O2的铁电特性严重依赖于晶体学方向,[001]方向作为极轴.
- 实现Hf0.5Zr0.5O2层的表轴生长,具有高度极性[001]方向和显著的铁电性,仍然是一个挑战.
研究的目的:
- 为了证明 (001) 导向的Hf0.5Zr0.5O2薄膜的表层生长,使用原子层表层 (ALE).
- 为了研究这些精确设计的膜中的铁电特性,域切换机制和负电容效应.
主要方法:
- 原子层 EPITAXY (ALE) 用于控制的薄膜沉积.
- 平面视图前置电子衍射用于分析晶体学定向和重定向.
- 铁电测量以量化极化和切换动态.
- 时间分辨率测量以研究负电容效应.
主要成果:
- 成功培养了以Epitaxial (001) 为导向的Hf0.5Zr0.5O2薄膜,达到78.9μC cm-2的铁电极化记录.
- 在唤醒过程中观察到格子从 (010) 到 (001) 的重定向,通过两步,90°铁弹性域切换模型来解释.
- 极化切换动态与时间解析的负电容相关,量化为 -170.0的等效高介电常数.
结论:
- ALE是一种强大的技术,用于控制Hf0.5Zr0.5O2薄膜的晶体方向,这对于增强铁电性至关重要.
- 该研究提供了对铁电域切换机制和铁电材料负电容的表现的基本见解.
- 这项工作为先进的铁电设备铺平了道路,利用精确定向的Hf0.5Zr0.5O2膜.
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