超宽带隙钻石/ε-Ga2O3异质连接pN二极管与故障电压超过3kV
Jianguo Zhang1,2, Ningtao Liu1, Li Chen1
1Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Nano letters
|December 16, 2024
概括
研究人员使用p型钻石和n型氧化物 (Ga2O3) 开发了一种新的动力装置. 这种超宽带间隙 (UWBG) 半导体异质连接实现了 3000 V 以上的故障电压,用于先进的功率电子.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 电力电子 电力电子 电力电子
背景情况:
- 超宽带隙 (UWBG) 半导体对于下一代电力电子产品至关重要,因为它们具有卓越的性能.
- 在UWBG材料中制造双极器件是具有挑战性的,因为在同一材料中实现有效的双极兴奋剂的局限性.
- 异极连接是克服兴奋剂限制和创建双极装置的常见策略.
研究的目的:
- 为使用UWBG半导体的强大的双极设备展示一种新的异极连接设计.
- 为了实现先进的电力电子应用的异常高的故障电压.
- 探索将p型钻石与n型氧化物 (Ga2O3) 整合在一起的潜力.
主要方法:
- 在p型钻石基板上制造n型 ε-Ga2O3型异质形薄膜,尽管晶格不匹配.
- 界面属性的表征,重点是C-O-Ga粘合和O终端的钻石表面.
- 设备制造和电气测试,以确定故障电压和性能.
主要成果:
- 实现了超过3000V的显著故障电压.
- 形成了钻石和e-Ga2O3之间的原子利接口,具有特定的粘合配置.
- 由于O端的钻石表面,证明了有效的整形异质连接.
- 减弱了电场拥挤,并通过异质连接设计提供了高效的热管理.
结论:
- 开发的p型钻石/n型ε-Ga2O3异极连接是超高功率双极装置的一个有前途的设计.
- 这种方法克服了UWBG双极兴奋剂的局限性,并实现了高性能功率电子.
- 该研究强调了一种高效的异质连接策略,以释放UWBG半导体的全部潜力.
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