通过将单光子雪崩二极管与BiCMOS网格电路集成,减少雪崩积累时间
Bernhard Goll1, Mehran Saadi Nejad1, Kerstin Schneider-Hornstein1
1Institute of Electrodynamics, Microwave and Circuit Engineering, TU Wien, Gusshausstrasse 25/E354-02, A-1040 Wien, Austria.
Sensors (Basel, Switzerland)
|December 17, 2024
概括
将单光子雪崩二极管 (SPAD) 与芯片上的BiCMOS门电路集成,可以显著减少雪崩积累时间. 这种芯片级整合最大限度地降低了寄生电容,提高了SPAD性能,以更快地检测光子.
科学领域:
- 光子学是指光子学的使用方法.
- 集成电路 集成电路
- 半导体设备 半导体设备
背景情况:
- 单光子雪崩二极管 (SPAD) 对于敏感的光检测至关重要.
- 在SPAD电路中的寄生电容可以限制性能,特别是雪崩积累时间.
- 传统的SPAD设计通常涉及离芯片门电路,引入bondpad电容.
研究的目的:
- 研究将SPAD与单一芯片上的BiCMOS门电路集成到单一芯片上的影响.
- 量化通过这种整合实现的雪崩积累时间的减少.
- 为了比较一个集成BiCMOS封闭电路与一个标准的CMOS封闭电路的性能.
主要方法:
- 使用0.35微米CMOS工艺扩展NPN晶体管模块的集成SPAD和BiCMOS门电路的制造.
- 使用集成的迷你和皮科探测器测量封闭电压瞬态.
- 综合BiCMOS SPAD和离芯片连线SPAD之间的雪崩积累时间的比较.
主要成果:
- 在芯片上集成消除了粘合板电容,这是寄生式电容的重要贡献者.
- 集成的BiCMOS封闭电路将SPAD雪崩积累时间缩短到1.6 ns.
- 这大约是两倍的改进,而离芯片连线SPAD的~3ns.
结论:
- SPAD 和 BiCMOS 门电路的芯片级集成有效地降低了寄生电容.
- 这种方法大大减少了雪崩的积累时间,提高了SPAD的操作速度.
- 开发的BiCMOS技术可以实现更快,更有效的单光子检测系统.
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