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Updated: Jun 4, 2025

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边缘重建对黑二烯生长机制的影响

Li Ping Ding1,2,3, Zi Ao Guo1, Fei Yue Qiao1

  • 1Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, China.

Inorganic chemistry
|December 17, 2024
PubMed
概括

黑色 (BP) 中边缘重建阻碍了大尺寸薄膜的生长. 然而,克服这种能源障碍促进了BP的稳定增长,推动了电子和光电子领域的应用.

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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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