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Updated: Jun 18, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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校正:为提高光探测器性能,单层CVD的工程表面状态密度增长为2D MoS2

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    PloS one
    |December 17, 2024
    PubMed
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    这项研究纠正了先前发表的一篇文章DOI. 校正确保科学研究结果的准确引用和检索.

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    A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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