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Updated: Jun 4, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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单层MoSe2的带偏移和电子亲和力由内部光辐射引起

Qin Zhang1,2, Siyuan Zhang1,2, Brent A Sperling3

  • 1Theiss Research, La Jolla, CA, USA.

Journal of electronic materials
|December 19, 2024
PubMed
概括

这项研究测量了单层MoSe2在Al2O3/Si和SiO2/Si上的电子能量带对齐,使用内部光发射光谱学. 结果为设计先进的二维电子和光电子设备提供了关键的电子亲和值.

关键词:
2D 材料是二维材料.内部光辐射的内部光辐射.带偏移的抵消带宽.电子亲和力是一种电子亲和力.

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