在使用Co和Cr接触的少数层MoSe2场效应晶体管中进行透式相变
Roshan Padhan1, Carlos Garcia2, Ralu Divan3
1Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA. nihar.r.pradhan@jsums.edu.
本研究探讨了几层二化 (MoSe2) 晶体管中的金属到绝缘体相位过渡. 接触器比接触器更接近二维透理论的行为.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学是一种材料科学.
- 纳米技术纳米技术
背景情况:
- 在二维 (2D) 材料中,金属到绝缘体相变 (MIT) 对于下一代电子设备至关重要.
- 了解二维半导体中的电子传输机制是一个持续的挑战.
- 门电场使2D材料中的可调节的电子属性成为可能.
研究的目的:
- 为了研究几个层的MoSe2场效应晶体管 (FET) 中可调节的透相过渡.
- 为了比较不同金属接触材料 (Cr和Co) 对MIT的影响.
- 通过温度依赖的电子运输测量来理解MIT的机制.
主要方法:
- 使用Cr和Co金属接触物制造MoSe2 FET.
- 取决于温度的电子运输测量 (50K到室温).
- 通过网关电压调整载体密度并分析导电数据.
主要成果:
- 两种Cr和Co接触者都表现出n型行为,在低温下显著提高了移动性.
- 与Cr接触器相比,具有Co接触器的设备显示出更高的室温和低温移动性.
- 观察到导电性从绝缘性到金属性行为的转变,Co接触与2D透理论很好地对齐.
结论:
- 金属接触材料的选择显著影响了MIT在少数层MoSe2 FET中的MIT.
- 接触方便电子运输行为,紧密遵循二维透理论.
- 在低温下,Cr接触显示了2D透理论的偏差,表明不同的传输机制.
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