BEOL 三维可堆叠的氧化物半导体CMOS逆变器,在低温下具有233的高电压增益
Yiyuan Sun1, Ying Xu1, Zijie Zheng1
1Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576.
Nano letters
|December 20, 2024
概括
研究人员开发了使用 (Te) 和氧化 (ITO) 的后端兼容互补金属氧化物半导体 (CMOS) 逆变器,用于高性能计算. 这些设备在低功耗的冷温度下表现出增强的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 电气工程 电气工程
背景情况:
- 高性能计算需要先进的半导体设备,能够在冷温度下有效运行.
- 传统的基于的互补金属氧化物半导体 (CMOS) 技术在极端温度环境中面临限制.
- 为后端线 (BEOL) 兼容设备开发新材料和架构对于下一代计算至关重要.
研究的目的:
- 开发和演示BEOL兼容的p型和n型场效应晶体管 (FET) 用于冷应用.
- 将这些FET集成到CMOS逆变器中,并评估它们在室温和冷温度下的性能.
- 研究氧化物半导体在节能高性能计算中的潜力.
主要方法:
- 使用喷沉积方法制造p型Te-TeO FET.
- 整合p型FET与氧化 (ITO) 通道的n-FET,使用一个共同的门和HfO2门介电.
- 在室温和冷条件下,CMOS逆变器性能的表征,包括电压增益和噪声边缘.
主要成果:
- 成功实现了BEOL三维可堆叠的氧化物半导体CMOS逆变器,具有出色的门电压匹配.
- 在室温下显示的高电压增益为132,在冷温度下显示的高电压增益为233 (2V VDD).
- 在超低VDD (0.5V) 实现了强大的性能,在冷温度下功耗低于60pW.
结论:
- 开发的Te-TeO和基于ITO的CMOS逆变器适合在低温温度下进行高性能计算.
- 喷方法为制造这些先进的半导体设备提供了一种经济有效,可扩展和可控制的方法.
- 这些氧化物半导体CMOS设备为超低功耗,高性能计算应用提供了一个有希望的途径.
相关概念视频
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