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Updated: Jun 4, 2025

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增强的突触记忆窗口和平面线性在铁电交叉点.

Yu-Rim Jeon1, Dongyoon Kim2, Chandan Biswas1

  • 1Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.

Advanced materials (Deerfield Beach, Fla.)
|December 21, 2024
PubMed
概括

本研究介绍了用于神经形态计算的先进的2D二 (In2Se3) 铁电结. 这些连接实现了显著增强的内存窗口和开/关比,使高效的突触操作与低功耗.

关键词:
2D vdW 材料的使用在美国,CNN是CNN.蒙尼斯特主义者 (Mnist)铁电道的交叉点 铁电道的交叉点神经形态计算系统的神经形态计算系统突触装置是一种突触装置.α-In2Se3Se3 的时间.

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