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再配置范德瓦尔斯金属半导体接触器通过间隔/脱间隔后处理

Gihyeon Kwon^1,2, Hyeon-Sik Kim¹, Kwangsik Jeong³

¹Department of Physics, Yonsei University, Seoul 03722, Republic of Korea.

|December 21, 2024

概括

这项研究引入了Se环境化,以优化二维 (2D) 半导体金属化. 这种方法提高了范德瓦尔斯 (vdW) 接口的稳定性,从而提高了设备性能和2D半导体电子中的低接触电阻.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

2D半导体的商业化需要优化与3D金属的接口.
了解和控制2D-3D接口上的范德瓦尔斯 (vdW) 相互作用对于薄膜半导体工艺至关重要.
目前的方法缺乏对VDW接口属性的精确控制.

研究的目的:

开发一种后处理方法来修改VDW间隙距离并增强界面稳定性.
为了研究Se间隙和脱间隙对2D-3D接口的影响.
改进2D半导体设备中的金属接触特性和设备性能.

主要方法:

使用Se-环境化作为后处理技术.
通过变化温度和后的持续时间来控制Se的间隙和脱间隙.
将该技术应用于p型WSe2和Au接口,并集成到WSe2互补金属氧化物半导体 (CMOS) 电路中.

主要成果:

成功修改了 vdW 间隙距离,并稳定了 2D-3D 接口结构.
在p型WSe2和Au之间实现了773 Ω·μm的异常低的接触电阻.
证明了无兴奋剂 WSe2 CMOS 电路的集成,通过最小化金属诱导的间隙状态和费米水平固定来展示改进的设备性能.

结论:

海洋环境化是优化二维半导体金属化的有效后处理方法.
该技术显著提高了金属接触特性和设备稳定性.
这一进步对二维半导体技术和新型电子设备的商业化充满希望.

关键词:

2D−3D vdW 接口接口间隔/脱间隔的时间.在治疗后的治疗.重构,重新配置,重新配置.两个维的材料是二维材料.范德瓦尔斯的金属接触接触

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