通过使用费米级别无固定2D金属电极实现P型垂直FET
Hyokwang Park1, Hoseong Shin1, Nasir Ali1
1SKKU Advanced Institute of Nano Technology and Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Nano letters
|December 23, 2024
概括
研究人员使用高工作功能的2D金属接触器改进了p型垂直场效应晶体管 (VFET). 这一突破提高了启/关比,并使密集,缩小规模的电子设备.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 固态电子 固态电子
背景情况:
- 2D纳米材料电子中的垂直场效应晶体管 (VFET) 提供了超短的通道长度.
- 在p型VFET中性能差的原因是门场穿透电极和工作功能的不足.
- 石墨烯电极 (工作功能的4.5 eV) 不足以达到最佳的VFET特性.
研究的目的:
- 通过用高工作功能的电极取代石墨烯来提高p型VFET的性能.
- 通过改进的接触材料来实现所需的VFET特性.
- 探索用于设备缩放的2D金属结合型假补充FET结构的潜力.
主要方法:
- 基于WSe2的p型VFET的制造,使用范德瓦尔斯接触.
- 使用高功能的二维金属 (2H-TaS2,NbSe2,NbS2) 作为电极材料.
- 调查费米级别的制抑制,以实现p型欧姆接触.
主要成果:
- 已证明基于WSe2的p型VFET具有大约10^5.5的高开/关比.
- 通过使用高工作功能的2D金属接触器,与WSe2通道实现了p型欧姆接触.
- 成功制造了一个2D金属结合的假补充FET结构.
结论:
- 高功能的二维金属接触对实现高性能p型VFET至关重要.
- 开发的VFET显示了密集集成和减少设备扩展的巨大潜力.
- 伪互补的FET结构表明了通往先进的二维电子设备的道路.
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