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Updated: Jun 4, 2025

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使用MOF的化泡设计功能化碳泡,用于100%的深度放电和超高容量的金属阳极

Peng Liu1, Simin Zhao1, Shengyong Gao1

  • 1State Key Laboratory of Chemical Resource Engineering, Beijing Key Laboratory of Electrochemical Process and Technology for Materials, Beijing University of Chemical Technology, Beijing 100029, P. R. China.

ACS nano
|December 23, 2024
PubMed
概括

一种新的化泡策略从可化的金属有机框架 (MOFs) 中创建Ni单个原子/量子点功能化碳泡 (NiSA/QD@CFs). 这些NiSA/QD@CF使得稳定的金属阳极能够提高电化学能量储存的性能.

关键词:
排放的百分比深度为100%.碳泡是一种碳泡.化泡形成的化泡金属-有机的框架.金属阳极是一种金属阳极.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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