铁电极化合效应在BiFeO3/α-In2Se3铁电场效应晶体管用于稳定的非挥发性内存
Yanrong Wang1, Yuchen Cai2, Shuhui Li2
1Institute of semiconductor, Henan Academy of Sciences, Zhengzhou, 450046, P. R. China.
Small (Weinheim an der Bergstrasse, Germany)
|December 24, 2024
概括
使用新α-In2Se3通道的铁电场效应晶体管 (FeFET) 显示了增强的数据保留. 这一突破通过克服CMOS集成挑战,改善了非挥发性内存技术.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 半导体设备 半导体设备
背景情况:
- 传统的铁电场效应晶体管 (FeFET) 面临着与补充性金属氧化物半导体 (CMOS) 工艺的整合挑战,原因是晶格匹配和高温回火要求.
- 铁电半导体α-In2Se3通过其范德瓦尔斯层结构提供了一个解决方案,简化了集成,绕过了格子不匹配问题.
研究的目的:
- 在双 FeFET 架构中研究 α-In2Se3 铁电半导体和 BiFeO3 铁电介电的协同效应.
- 为了增强FeFET中的极化保留和数据存储功能,用于先进的非挥发性内存应用.
主要方法:
- 制造一个双 FeFET 装置,其中包含一个 BiFeO3 介电层和一个 α-In2Se3 通道.
- 新型双FeFET与使用MoS2通道或HfO2介电体的控制设备的性能比较.
主要成果:
- 与α-In2Se3通道和BiFeO3介电器的双FeFET与控制设备相比显示出显著改善的性能.
- 在380K下实现了长达1000秒的延长保留时间,突出显示了增强的极化保留.
结论:
- α-In2Se3和BiFeO3层之间的协同合有效地提高了FeFET的性能和数据保留.
- 这项工作通过克服传统制造障碍,为开发下一代非易失性内存技术提供了一个有希望的途径.
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