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循环门纳米空气通道晶体管:实现超低的下值波动和工作电压

Haiquan Zhao¹, Feiliang Chen¹, Yazhou Wei¹

¹School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|December 25, 2024

概括

研究人员开发了新的循环门纳米级空气通道晶体管 (CG-NACTs),克服了MOSFET的局限性. 这些晶体管为极端环境电子提供了优越的下值摆动和稳定性.

科学领域:

半导体物理半导体物理
先进的材料科学科学材料科学
纳米电子技术纳米电子技术

背景情况:

传统的金属氧化物半导体场效应晶体管 (MOSFET) 在极端环境中面临性能限制,原因是像博尔茨曼定律这样的物理约束.
纳米级空气通道晶体管 (NACTs) 通过利用真空式通道和福勒-诺德海姆道化提供了一个潜在的解决方案.

研究的目的:

提出并制造一个新的循环门纳米级空气通道晶体管 (CG-NACT).
评估CG-NACT的性能特征,重点关注下值摆动,电流驱动和稳定性.

主要方法:

在4英寸的晶片上制造CG-NACT,使用CMOS兼容的工艺.
实施一个创新的门控制机制,以提高晶体管的性能.
电气性能的表征,包括下值波动 (SS) 和开/关比.
在高温 (高达150°C) 和辐射下测试设备的稳定性.

主要成果:

实现了0.15mV/十年的超低下值波动 (SS),在三十年的排水电流中平均为1.5mV/十年.
在0.7V的低工作电压下,证明了毫安培级的排水电流.
获得了7.82×106的最大开/关比.
在高温和辐射下经过确认的高运行稳定性.

结论:

开发的CG-NACT与传统的MOSFET相比,表现优越,特别是在下值波动方面.
对于在极端环境中要求高性能和可靠性的应用,CG-NACTs显示出有前途.
成功演示了使用CG-NACTs设计的第一个逆变器电路,展示了实际应用.

关键词:

具有高的开/关比率.耐高温和耐辐射的耐用性纳米级空气通道晶体管超低的下值摆动超低的下值摆动超低工作电压的工作电压.

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