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Updated: Jun 4, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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在单层过渡金属二甲基化物中自由载体奥格-梅特纳重组

Jörg Hader1, Jerome V Moloney1

  • 1Wyant College of Optical Sciences, University of Arizona, 1630 East University Boulevard, Tucson, Arizona 85721, United States.

Nano letters
|December 27, 2024
PubMed
概括

在2D过渡金属二甲基化物中,自由载体奥格-迈特纳重组 (AMR) 损失与III-V材料相似. 然而,带隙重规范化会对载体密度,温度和介电环境产生独特的依赖.

关键词:
奥格尔-迈特纳重组组合.DFT计算的计算方法带隙重规范化 带隙重规范化运输商生命周期 运输商生命周期多体计算的多体计算一个单层的单层.过渡金属二甲基二甲基化物

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

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