基板偏向电压对 (AlCrMoNiTi) N膜的结构和性能的影响
Xue Gao1, Bin Li1, Yiman Zhao1
1School of Intelligent Manufacturing, Luoyang Institute of Science and Technology, Luoyang 471023, China.
Nanomaterials (Basel, Switzerland)
|December 27, 2024
概括
偏差电压影响高合金化物 (HEAN) 薄膜. 在最佳条件下,可以获得具有复合结构的坚硬,耐腐蚀 (AlCrMoNiTi) N HEAN薄膜.
科学领域:
- 材料科学 材料科学 材料科学
- 表面工程是什么?表面工程是什么?
- 纳米技术纳米技术
背景情况:
- 高合金化物 (HEANs) 提供先进的材料特性.
- 控制沉积参数对于定制HEAN薄膜性能至关重要.
- 协同波阴极真空弧 (co-FCVA) 技术可以精确合成薄膜.
研究的目的:
- 研究偏向电压对 (AlCrMoNiTi) N HEAN膜的微观结构和性能的影响.
- 为了优化合成条件,提高硬度和耐腐蚀性.
- 了解沉积参数与薄膜特性之间的关系.
主要方法:
- 合成 (AlCrMoNiTi) N HEAN 薄膜使用不同偏差电压的共同FCVA沉积.
- 微观结构的表征,以分析薄膜组成和相位结构.
- 机械测试以确定硬度.
- 电化学测试用于评估耐腐蚀性.
主要成果:
- 增加偏移电压减少了沉积率,但增加了离子能量.
- 所有片都呈现出FCC相和金属Ni的复合结构.
- 在-100V偏差下合成的薄膜达到38.7GPa的最大硬度.
- 这种薄膜还表现出极好的耐腐蚀性,电流密度低,为4.9 × 10−7 A·cm−2.
结论:
- 偏差电压是调整HEAN膜特性的一个关键参数.
- 最佳偏向电压为-100V,因此产生了高度坚硬和耐腐蚀的 (AlCrMoNiTi) N HEAN膜.
- 增强的特性归因于强大的Me-N结合,薄膜密度和离子轰炸效应.
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