基于β-Ga2O3二极管的电气和温度特征研究,由可变阳极工作功能控制
Yunlong He1, Baisong Sheng1, Xiaoli Lu1
1State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, National Engineering Research Center of Wide Band-Gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China.
Nanomaterials (Basel, Switzerland)
|December 27, 2024
概括
这项研究探讨了不同阳极金属如何影响氧化二极管. /阳极为舒特基屏障二极管提供了最低的启动电压,而/阳极为PN二极管提供了更好的热稳定性.
科学领域:
- 材料科学与工程 材料科学与工程
- 半导体设备物理 半导体设备物理
- 电力电子 电力电子 电力电子
背景情况:
- 氧化 (β-Ga2O3) 由于其宽带间隙,是功率电子产品的一个有前途的材料.
- 斯科特基屏障二极管 (SBDs),连接屏障斯科特基二极管 (JBSDs) 和PN二极管 (PNDs) 是电力系统中的关键组件.
- 阳极金属工作功能显著影响设备性能,特别是接触性能和开机特性.
研究的目的:
- 系统地研究具有不同工作功能的阳极金属 (Ti/Au和Ni/Au) 对基于β-Ga2O3的SBD,JBSD和PND的影响.
- 分析这些设备的电传和温度相关特性.
- 为了评估制造设备的逆断电压 (BV) 性能.
主要方法:
- 使用Silvaco TCAD模拟软件进行设备建模和分析.
- 制造的以β-Ga2O3为基础的SBD,JBSD和PND,具有Ti/Au和Ni/Au阳极.
- 在不同温度下对电气特性进行比较分析,包括开启电压 (Von) 和电流密度.
主要成果:
- 与PND相比,Schottky屏障二极管 (SBD) 的开启电压较低,电流密度较高.
- /阳极SBD实现了0.2V的最低记录的启动电压.
- 带有Ni/Au阳极的PND显示出优越的热稳定性,在200°C时具有最小的Von和电流密度降低,而Ti/Au阳极SBD显示出最差的热性能.
结论:
- 阳极金属的选择极大地影响了基于β-Ga2O3的二极管的性能.
- /阳极适用于低开电压应用 (SBD),而/阳极为PND提供更好的热稳定性.
- 这些发现为优化高功率和低功耗系统的β-Ga2O3二极管提供了宝贵的见解.
相关概念视频
Characteristics of BJT
573
The Bipolar Junction Transistor (BJT), specifically in a common-emitter configuration, exhibits distinct current-voltage characteristics crucial for understanding its behavior in electronic circuits. These characteristics are established through experimental measurements of voltage and current relationships.
For input characteristics, the base-emitter voltage is varied, maintaining a constant collector-emitter voltage. This setup reveals a Shockley-type dependence of the collector current on...
For input characteristics, the base-emitter voltage is varied, maintaining a constant collector-emitter voltage. This setup reveals a Shockley-type dependence of the collector current on...
573
Absorption of Radiation
678
The rate of heat transfer by emitted radiation is described by the Stefan-Boltzmann law of radiation:
678
Types of Semiconductors
434
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
434


