β-Ga2O3,

Yunlong He1, Baisong Sheng1, Xiaoli Lu1

  • 1State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, National Engineering Research Center of Wide Band-Gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China.

PubMed
概括

这项研究探讨了不同阳极金属如何影响氧化二极管. /阳极为舒特基屏障二极管提供了最低的启动电压,而/阳极为PN二极管提供了更好的热稳定性.