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相关概念视频

Semiconductors01:22

Semiconductors

466
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
466
Types of Semiconductors01:20

Types of Semiconductors

434
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
434
Non-ohmic Devices00:51

Non-ohmic Devices

984
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
984
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

238
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
238
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

173
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
173

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在上集成的冷III-V和Nb电子,用于大型量子计算平台.

Jaeyong Jeong1, Seong Kwang Kim1, Yoon-Je Suh1

  • 1School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.

Nature communications
|December 31, 2024
PubMed
概括

研究人员使用III-V和Nb超导体开发了新的冷电子. 这些低功耗设备与集成,可控制数百万量子位 (量子位) 并克服可扩展性挑战.

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科学领域:

  • 量子计算硬件 量子计算硬件
  • 低温电子产品 低温电子产品
  • 半导体集成技术 半导体集成技术

背景情况:

  • 量子计算的可扩展性受到量子比特大小,I/O和整合性挑战的阻碍.
  • 目前用于量子比特控制的冷式CMOS电子设备在大型系统中消耗的电量过大.
  • 在Si CMOS和集成控制电子中高保真度的自旋量子比特显示出希望,但面临功率限制.

研究的目的:

  • 开发超低功率的冷电子,用于控制数百万个量子比特 (qubits).
  • 为了证明新的III-V和Nb基于超导体的电子与的集成.
  • 为了克服现有的冷控制解决方案的电力消耗瓶.

主要方法:

  • 用制造和集成III-V二维电子气体和Nb超导体的低温电子.
  • 在低温 (4K) 设备性能的表征.
  • 测量关键电子参数,包括单位增益切断频率,单位功率增益切断频率和噪声因子.

主要成果:

  • 证明了基于III-V和Nb超导体的低温电子与的集成.
  • 实现了超低功耗,比CMOS少10倍多.
  • 设备具有高频性能,单位增益切断频率为601GHz,单位功率增益切断频率为593GHz.

结论:

  • 基于III-V和Nb超导体的冷电子为可扩展的量子计算提供了可行的解决方案.
  • 开发的技术显著降低了电力消耗,使得数百万量子比特的控制和读取成为可能.
  • 这一进步解决了实现大规模,耐故障量子计算机的关键瓶.