证据表明,临界电流密度的横向变化可以大大减轻高场REBCO磁铁中的选电流应力
Jeseok Bang1, Jonathan Lee1, Griffin Bradford1
1National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.
研究人员通过将单裂纹边缘向内定向来减轻REBCO (REBa2Cu3O7-x) 涂层导体中的塑料损伤. 这大大降低了超高场磁体中的选电流应力 (SCS),提高了导体完整性.
科学领域:
- 材料科学 材料科学 材料科学
- 超导电性 超导电性 超导电性
- 磁铁技术 磁铁技术的使用
背景情况:
- 稀土铜氧化物 (REBCO) 涂层导体中的塑料损伤,由选电流应力 (SCS) 引起,是超高场超导磁铁的关键问题.
- 之前的小大线圈3 (LBC3) 实验揭示了显著的波形塑料损伤,除了使用单裂纹导体与面向内部的裂纹边缘的区域.
研究的目的:
- 为了研究在REBCO导体中SCS诱导的塑料损伤的切口边缘取决于方向的缓解.
- 为了验证向内面的切口边缘在减少SCS方面在超高场磁铁的背景下有效的效果.
主要方法:
- 构建和测试小大线圈4 (LBC4),复制LBC3,但仅使用单裂纹REBCO带与面向内部的裂纹边缘.
- 通过对高磁场的充电周期进行性能评估,监测火和消散.
- 导体损坏的尸体分析和临界电流密度 (Jc) 的横向变化的特征.
主要成果:
- 与LBC3相比,LBC4在没有火的情况下达到44.0 T,波导体损伤明显较小,证实了显著的SCS缓解.
- 由于接头加热,在43.5T发生了火,但整体导体完整性得到了改善.
- 详细的分析显示,LBC4导体的横向Jc梯度较高,裂口边缘Jc较高,显著降低了计算选电流应力.
结论:
- 将单REBCO导体边缘向内定向,可以有效地减轻超高场磁铁中SCS引起的塑料损伤.
- 在导体宽度上的临界电流密度 (Jc) 的横向变化在应力分析和SCS减轻中起着至关重要的作用.
- 对于高场超导磁体的未来设计,应纳入这种Jc梯度理解,以实现精确的应力管理和提高导体性能.
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