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Updated: Jun 4, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Published on: May 24, 2020

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与p型铜的散射效应相关的低频噪声 ((I) 氧化物薄膜晶体管

Jaewook Yoo1, Seohyeon Park1, Hongseung Lee1

  • 1Department of Electronic Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea.

ACS applied materials & interfaces
|December 31, 2024
PubMed
概括

铜 (I) 氧化物 (Cu2O) 薄膜晶体管 (TFT) 中的低频噪声主要是由通道电阻引起的. 减少通道厚度显著影响噪声,为开发更好的氧化物半导体提供了洞察力.

关键词:
阿雷尼乌斯的图形图表胡格的流动性波动波动.道电阻是一种道电阻.铜 (I) 氧化物半导体低频噪声是一种低频噪声.散射散射是一种散射.传输线路方法 (TLM)

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