接近红外的PIN光二极管具有>1A/W响应能力
Hanchen Liu1, Toni P Pasanen1,2, Tsun Hang Fung1
1Aalto University, Department of Electronics and Nanoengineering, Espoo, Finland.
Light, science & applications
|December 31, 2024
概括
这项研究介绍了一种新的纳米工程光二极管,在近红外光谱中提供超过90%的外部量子效率. 这种CMOS兼容的探测器在室温下实现了高性能,推进了高效的光子检测.
科学领域:
- 半导体物理 半导体物理
- 光电学是指光电子产品.
- 材料科学是一种材料科学.
背景情况:
- 近红外 (NIR) 检测对于许多应用至关重要.
- 目前的NIR探测器在光谱响应或材料成本和兼容性方面存在局限性.
- (Ge) 是一种CMOS兼容的材料,有可能用于光电子设备.
研究的目的:
- 使用开发了一种高性能,CMOS兼容的NIR光二极管.
- 在广泛的光谱范围内实现高外部量子效率 (EQE).
- 为了减少光二极管中的光学和电气损耗.
主要方法:
- 使用CMOS兼容的制造纳米工程PIN光二极管.
- 通过表面纳米结构最小化光学损失.
- 通过原子层沉积的氧化被动化和介电诱导的电场载体收集来减少电损.
主要成果:
- 经验证的外部量子效率 (EQE) 在室温和零偏差下在1.2-1.6μm之间的波长中超过90%.
- 在1.55微米时,高响应率为1.15A/W.
- 异常频谱响应范围,EQE在300 nm以下超过100%.
- 低暗电流密度为76μA/cm2在-5V偏差下,低于以前报告的Ge光电二极管.
结论:
- 纳米工程的Ge PIN光电显示了NIR检测的最先进的性能.
- 该设备是CMOS兼容的,为III-V材料提供了具有成本效益的替代品.
- 这一进步对光二极管和NIR检测技术的设计和制造有重大影响.
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