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Updated: Jun 4, 2025

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在单层NbSeCl中调节valleytronic特性

Xiaole Qiu1, Benchao Gong2, Wenjun Zhang1

  • 1School of Physics and Electronic Information, Weifang University, Weifang 261061, China. hc_yang90@163.com.

Physical chemistry chemical physics : PCCP
|January 2, 2025
PubMed
概括

这项研究探讨了NbSeCl的valleytronics,显示磁性兴奋剂和异构结构显著改变其valleytronic特性. 这些进步为下一代valleytronic设备铺平了道路.

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