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激光诱导的相位控制的形态相位边界氧化物-氧化物

Seung-Mo Kim¹, Minjae Kim¹, Chan Bin Lee¹

¹Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, South Korea.

ACS applied materials & interfaces

|January 2, 2025

概括

一种新的激光扫描方法精确控制铁电相,达到3.5 Å相当的氧化物厚度和68 Å的介电常数. 这一过程显著减少了先进电子设备HZO薄膜的泄漏电流.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
电气工程电气工程

背景情况:

铁电材料对于先进的电子设备至关重要,但控制它们的相位和电特性仍然具有挑战性.
现有的制方法,如快速热制 (RTA),在实现最佳铁电特性方面存在局限性.
氧化 (HZO) 是一个有前途的铁电材料,但其性能高度依赖于加工条件.

研究的目的:

开发和优化一种新的连续波激光扫描化 (CW-LSA) 工艺,用于精确控制HZO薄膜中的铁电相.
研究CW-LSA对HZO薄膜的电性能的影响,包括等效氧化物厚度 (EOT) 和介电常数 (κ).
为了比较使用CW-LSA处理的HZO薄膜与使用优化RTA处理的HZO薄膜的性能.

主要方法:

一个新的连续波激光扫描化 (CW-LSA) 工艺被开发和优化用于金属-铁电-金属 (MFM) 电容器结构中的HZO薄膜.
进行电气表征以确定关键参数,如等效氧化物厚度 (EOT),介电常数 (κ) 和泄漏电流密度 (Jg).
用CW-LSA处理的HZO薄膜的性能与使用优化快速热 (RTA) 工艺处理的参考组进行了比较.

主要成果:

优化的CW-LSA工艺实现了3.5 Å的等效氧化物厚度 (EOT) 和68 Å的高介电常数 (κ) HZO薄膜.
经CW-LSA处理的HZO的泄漏电流密度 (Jg) 在+0.8V时为4.6 × 10−5A/cm2,比RTA参考组低四倍.
6纳米的HZO薄膜表现出卓越的电气特性,归因于形态相边界结构 (MPB) 的稳定形成.

结论:

CW-LSA工艺提供了一种新且有效的方法,用于精细控制像HZO.这样的铁电材料的相位.
在HZO薄膜中,CW-LSA可实现卓越的电气性能,包括减少泄漏电流和提高介电性能.
CW-LSA的定向扫描特性促进了形态相边界 (MPB) 的稳定形成,从而改善了设备特性.

关键词:

在 HZO HZO 中.MFM电容器的电容器是什么连续波激光扫描火火高-κ 的材料.形态变异的相位边界

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