g-C3N4,-

Na Sa1, Kaiqi Nie2, Yi Sheng Ng3

  • 1Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED and Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China.

Nanotechnology
|January 2, 2025
PubMed
概括

这项研究引入了一种新的方法,使用化和离子液门来减少石墨碳化物 (g-C3N4) 中的电子孔再组合. 这大大提高了光电子和光催化应用的材料性能.

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