相关实验视频

Updated: May 7, 2025

Generation and Coherent Control of Pulsed Quantum Frequency Combs
06:42

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

8.9K

通过FeFET循环到循环变化和电荷域计算来证明高可重配置性和低功耗强大的物理不可克隆功能

Taixin Li1, Xinrui Guo1, Franz Müller2

  • 1Department of Electronic Engineering, BNRist/LFET, Tsinghua University, Beijing, China.

Nature communications
|January 3, 2025
PubMed
概括

本研究介绍了一种基于强大的物理非克隆功能 (PUF) 的新型铁电场效应晶体管 (FeFET),用于安全的物联网 (IoT) 认证. 开发的PUF提供了高可重配置性,低功耗和强大的安全性来抵御攻击.

更多相关视频

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation10:33

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation

Published on: February 27, 2019

8.3K
In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays10:05

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

2.3K

相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
251
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
194
Clamper Circuit01:14

Clamper Circuit

A clamper circuit, also known as a DC restorer, represents a specialized variant of the rectifier circuit, notable for its method of taking the output across the diode rather than the capacitor. This configuration lends to several distinctive applications, particularly in handling square wave inputs.
Within this circuit, the diode's orientation prompts the capacitor to charge up to the level of the most negative peak of the input signal. Upon reaching this state, the diode ceases to...
323
Fast Decoupled and DC Powerflow01:24

Fast Decoupled and DC Powerflow

The fast decoupled power flow method addresses contingencies in power system operations, such as generator outages or transmission line failures. This method provides quick power flow solutions, essential for real-time system adjustments. Fast decoupled power flow algorithms simplify the Jacobian matrix by neglecting certain elements, leading to two sets of decoupled equations:
120
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
290
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
238