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Updated: May 7, 2025

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一个低开关损失的GaN沟MOSFET设计,采用三重盾结构

Yihang Qiu1, Li Wei2

  • 1College of Information and Control Engineering, Jilin Institute of Chemical Technology, Jilin, 132022, China.

Scientific reports
|January 3, 2025
PubMed
概括

一种新的化 (GaN) 沟MOSFET具有三重盾结构,可显著降低门排水负荷 (Qgd). 这一创新降低了寄生电容,提高了功率电子应用的设备性能.

关键词:
在Cgdgd中使用.在GaN沟中使用MOSFET.这是PSR的PSR.Qgdgd Qgd 在线观看 在线观看这是SG,SG,SG.半包装的 半包装的切换损失 切换损失 切换损失

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