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Updated: Jun 4, 2025

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耐用的IGZO/SnS/IGZO异联光电晶体管阵列用于图像传感器

Kyungho Park1, Byung Ha Kang2, Jong Bin An1

  • 1School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.

ACS applied materials & interfaces
|January 3, 2025
PubMed
概括

研究人员为图像传感器开发了耐用的--氧化物 (IGZO) 和硫化 (SnS) 光传感器阵列. 新的双重结构确保了下一代光电子设备的稳定运行和高性能.

关键词:
异质连接光晶体管的光晶体管.图像传感器 图像传感器--氧化物-氧化物持久的光导电性 持久的光导电性硫化锡硫化的使用情况可见光探测器可见光探测器

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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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