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Updated: Jun 4, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

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铁磁Heusler道连接处具有快速旋转转移扭矩切换,低磁化使其成为可能

Chirag Garg1, Panagiotis Ch Filippou2, Ikhtiar3

  • 1IBM Research-Almaden, San Jose, CA, USA. chirag.garg1@ibm.com.

Nature nanotechnology
|January 3, 2025
PubMed
概括

研究人员使用低磁化合金开发了先进的磁道连接内存设备. 这一突破通过减少写入切换电流,使得更快,更可扩展的磁性随机访问存储器 (MRAM) 成为可能.

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