相关实验视频

Updated: Jun 3, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

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伪道磁电阻在扭曲的范德瓦尔斯Fe3GeTe2同质连接中

Reiji Obata1, Haiming Sun2, Kartik Samanta3

  • 1Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa, 252-5258, Japan.

Advanced materials (Deerfield Beach, Fla.)
|January 6, 2025
PubMed
概括

使用扭曲的Fe3GeTe2片的Twistronics工程创建了没有障碍的伪道磁电阻 (PTMR). 扭转角度控制PTMR,使新的反铁磁自旋电子应用成为可能.

关键词:
大角度的Twistronics可以使用.格子不匹配的情况磁性薄层的磁性薄层是什么磁道的交叉点 磁道的交叉点范德瓦尔斯的差距是差距.

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