相关实验视频

Updated: Jun 3, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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接口层提高了高流动性和交换机比率在范德瓦尔斯电子的电子

Chi Zhang1,2, Enlong Li1,2, Caifang Gao1,3

  • 1Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China.

Nano letters
|January 6, 2025
PubMed
概括

在硫化 (ReS2) 场效应晶体管中引入牺牲层显著提高了移动性和电流开/关比,同时减少了离电流,从而实现了先进的集成电路.

关键词:
在 ReS2 晶体管中.作为一个牺牲层.高流动性的高流动性.逻辑电路中的逻辑电路.打开/关闭的比率.

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