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Updated: May 12, 2026

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
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Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

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在感应合的等离子反应离子蚀刻下使用化和气混合物干蚀刻的InGaZnO薄膜的干蚀刻特性

Changyong Oh1, Myeong Woo Ju2,3, Hojun Jeong4

  • 1DRAM Process Architecture Team, Samsung Electronics, Hwaseong-si 18448, Gyeonggi-do, Republic of Korea.

Materials (Basel, Switzerland)
|January 8, 2025
PubMed
概括

使用化 (HCl) 和 (Ar) 气体混合物优化了氧化 (IGZO) 薄膜的诱导合血反应蚀刻 (ICP-RIE). 这产生了出色的蚀刻速率和图案IGZO薄膜晶体管具有卓越的电气性能.

关键词:
在GaZnO (IGZO) 中.干蚀刻是干蚀刻的方法之一.感应合等离子反应离子蚀刻 (ICP-RIE)不基于的蚀刻气是没有的.薄膜晶体管是一种薄膜晶体管.

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