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Updated: May 6, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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设计和增长的P型AlGaN分级组合超级网格的设计和增长

Yang Liu1, Xue Yang1, Xiaowei Zhou1,2

  • 1School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.

Micromachines
|January 8, 2025
PubMed
概括

研究人员开发了一种新型的等级化 (AlGaN) 超晶格结构. 这种先进的材料具有出色的结构和电气性能,为改进的半导体设备铺平了道路.

关键词:
在MOCVD中,MOCVD是最常见的.孔中的度是孔中的度.定期厚度的周期性厚度这是一个超级格子.

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相关概念视频

Metallic Solids02:37

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and...
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