用 (C2H4/He) 稀释乙烯的蚀刻化学过程优化,用于互连集成
Hwa-Rim Lee1, Eun-Su Jung1, Jin-Uk Yoo1
1School of Integrative Engineering, Chung-Ang University, 84, Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea.
Micromachines
|January 8, 2025
概括
在蚀过程中选择乙烯 (C2H4) 而不是 (N2) 作为被动化气体,会产生较薄,较弱的聚合物,含残留较少. 这会影响半导体互连的完整性.
科学领域:
- 材料科学 材料科学 材料科学
- 化学工程是化学工程的重要组成部分.
- 半导体制造业 半导体制造业
背景情况:
- (Al) 互连在半导体设备中至关重要.
- 蚀刻过程可以在Al侧壁上形成聚合物,影响设备性能.
- 化气体在蚀刻过程中控制聚合物形成起到作用.
研究的目的:
- 为了研究不同被动化气体在Al蚀刻过程中对聚合物特性的影响.
- 为了比较 (N2) 和以 (C2H4/He) 稀释的乙烯的影响.
- 分析聚合物组成,厚度,强度和残留水平.
主要方法:
- 使用N2和C2H4/He被动化气体形成的聚合物的比较分析.
- 聚合物厚度,强度和元素组成 (C,O) 的表征.
- 测量后的残留含量.
主要成果:
- 与 (N2) 相比,乙烯 (C2H4) 产生了较薄,较弱的聚合物.
- 用C2H4形成的聚合物具有较低的残留含量.
- 元素分析显示,C2H4基聚合物的碳含量较低,氧含量较高.
结论:
- 选择被动化气体显著影响在Al蚀刻过程中聚合物的特性.
- C2H4是N2的一个有希望的替代品,用于优化Al蚀刻工艺.
- 了解这些影响对于提高基于人工智能互连的可靠性至关重要.
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