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增强的驱动电流在10纳米的通道长度门全方位场效应晶体管使用超细压力Si / SiGe通道

Potaraju Yugender¹, Rudra Sankar Dhar¹, Swagat Nanda¹

¹Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl 796 012, Mizoram, India.

|January 8, 2025

概括

一个新的10纳米门全方位场效应晶体管 (GAAFET) 使用应力通道显著提高了设备的性能. 这种设计克服了短通道效应,优于未来半导体应用的当前规格.

科学领域:

半导体设备物理半导体设备物理
材料科学材料科学材料科学
纳米电子学纳米电子学

背景情况:

由于超出22nm技术的短通道效应 (SCEs),MOSFET的连续扩展面临限制.
过技术提供了一种可行的解决方案,以增强先进纳米设备的排水电流和减轻SCEs.
像FinFETs这样的多门架构显示出希望,但仍然面临着扩展挑战.

研究的目的:

开发和分析一种新的10纳米门全方位场效应晶体管 (GAAFET),采用应力通道.
为了研究压力 - 层在压力层之间对设备性能的影响.
将拟议的10纳米GAAFET的电气特性与现有的22纳米GAAFET,FinFET和国际设备和系统路线图 (IRDS) 2022规格进行比较.

主要方法:

制造一个10纳米门长的GAAFET,具有独特的应变通道结构.
结合应变工程,在两个应变层之间使用应变 - 层.
综合的电气特性,包括当前,非当前,值电压 (VTH),下值斜率和DIBL.

主要成果:

与22纳米版本和现有的SOI FinFET相比,10纳米应变GAAFET表现出优越的电性能.
拟议的GAAFET设计显著改善了开/关电流比率,并减少了短通道效应.
开发的10纳米GAAFET的性能指标超过了IRDS 2022规格,这表明设备功能得到了增强.

结论:

新的10纳米应力GAAFET架构有效地抑制了短通道效应.
这种先进的GAAFET设计为未来纳米级半导体设备实现更高性能提供了有希望的途径.
在GAAFET中整合应变工程对于推动设备扩展和性能的边界至关重要.

关键词:

这就是GAAFET的意义.在绝缘体上的异构结构.在当前的电流上.堆叠的高K.过的是一种过的.

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