相关实验视频

Updated: Jul 4, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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在200毫米的SOI基板上,GaN缓冲器的750V分解使用反向级超级晶格层

Shuzhen You1,2, Yilong Lei1,2, Liang Wang1,2

  • 1Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.

Micromachines
|January 8, 2025
PubMed
概括

这项研究展示了一种新的化 (GaN) 缓冲器在在绝缘体 (SOI) 基板上使用反向阶段超级晶格 (RSSL) 缓冲器. 这种方法可以实现卓越的晶圆质量和高断电压,用于先进的电子设备.

关键词:
在SOI上获得GAN.金属有机化学气体沉积沉积.反向阶段超级网格缓冲区的反向阶段超级网格缓冲区

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

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