相关实验视频

Updated: Jun 3, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K

灵活和可穿戴电子产品的二维二硫化物晶体管的进步

Kyoungwon Kwak1, Hyewon Yoon2, Seongin Hong1,2

  • 1Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea.

Micromachines
|January 8, 2025
PubMed
概括

灵活的电子正在推进二维二硫化物 (MoS2) 晶体管. 本综述强调了高性能可穿戴设备的制造方法和应用,以应对当前的挑战.

关键词:
两维材料是二维材料.灵活的电子产品灵活的电子产品二硫化物 (MoS2) 是一种二硫化物.晶体管是一种晶体管.过渡金属二甲基化物 (TMDs) 过渡金属二甲基化物可以穿戴的电子产品.

更多相关视频

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

10.4K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K

相关概念视频

MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
417