一个新的自偏 pMOS 紧深沟 CSTBT 与增强的权衡和短路能力
Jianbin Guo1, Zhehong Qian1, Xinru Chen1
1School of Microelectronics, Fudan University, Shanghai, 200433, China.
Scientific reports
|January 8, 2025
概括
一种新的深沟CSTBT (DT-CSTBT) 通过抑制电流和改善散热来提高设备的可靠性和性能. 这种新结构将短路安全运行区域扩大了23.5%,并改善了开启状态电压和关机损失的权衡.
科学领域:
- 半导体设备物理学 半导体设备物理
- 动力电子产品的动力电子.
背景情况:
- 传统的CSTBT在短路处理和热管理方面存在局限性.
- 优化启动状态电压和关机损失之间的权衡对于电源设备的效率至关重要.
研究的目的:
- 提出和研究一个新的深沟CSTBT (DT-CSTBT) 结构.
- 评估拟议的DT-CSTBT的性能提升,包括安全运行区域和功率损耗降低.
主要方法:
- 一个新型深沟CSTBT (DT-CSTBT) 的设备模拟,其中包括一个发射沟和一个P层.
- 分析自我偏差的pMOS特性,包括紧效应,和电流和电场分布.
- 在短路安全操作区域 (SCSOA),启动状态电压 (VON) 和关机损失 (Eoff) 的改进量化.
主要成果:
- 由于其特殊的结构 (发射沟,N-CS层,P层,P井),DT-CSTBT显示出出色的紧效应潜力.
- 通过抑制和电流和改善散热,在短路安全操作区域 (SCSOA) 中实现了23.5%的扩张.
- 与传统的CSTBT相比,启动状态电压 (VON) 和关机损失 (Eoff) 之间的权衡得到了23.2%的改善.
- 由于电场移位,提高了门的可靠性.
结论:
- 拟议的DT-CSTBT在短路耐受性和功率效率方面提供了显著的改进.
- 新型结构有效地减轻了传统CSTBTs的关键局限性,为更强大的功率半导体设备铺平了道路.
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