在2D CrSBr磁铁中通过堆叠工程进行可编程磁性歇斯底里
Carla Boix-Constant1, Andrey Rybakov1, Clara Miranda-Pérez1
1Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain.
Advanced materials (Deerfield Beach, Fla.)
|January 9, 2025
概括
扭曲的2D范德瓦尔斯异构结构提供可调节的磁性. 在CrSBr中,不同的扭转角度和层数可以控制旋转纹理和磁性内存,这对旋转电子学至关重要.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 二维 (2D) 范德瓦尔斯磁铁使得通过扭曲可以设计出奇特的旋转纹理,如 skyrmions 和磁域.
- 这些异构结构中的自旋逆转过程可以通过改变磁层的数量来进一步操纵.
研究的目的:
- 为了研究CrSBr异构结构中不同的扭转角度和层配置如何影响磁性特性和旋转切换行为.
- 探索控制磁性歇斯底里和实现新型旋转纹理的潜力,用于旋转电子应用.
主要方法:
- 制造具有90度扭转的对称 (单层/单层,双层/双层) 和不对称 (单层/双层) CrSBr异构结构.
- 磁传输性质的表征,以分析磁性歇斯底里.
- 微磁模拟以合理化观察到的旋转切换过程.
主要成果:
- 观察到磁性歇斯底里,并发现它高度依赖于应用的磁场的大小和方向.
- 扭曲角度和层数量都在很大程度上决定了磁反转特征.
- 在零场时实现了挥发性和非挥发性磁性内存之间的可调节切换.
- 在特定的磁场值 (正或负) 上,对突然的磁反转过程的按需控制得到了证明.
结论:
- 扭曲角度和层数的组合是设计扭曲磁铁旋转切换反转的一个关键因素.
- 这种可调性对旋转电子设备的小型化和创建新型旋转纹理具有前景.
- 这些发现为设计先进的磁性内存和逻辑设备提供了途径.
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