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Updated: Jun 3, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Published on: October 23, 2018

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通过构建Schottky接触,提高基于BCZT的电容器的储能性能

Zixiong Sun1,2, Haoyang Xin1, Liming Diwu1

  • 1School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, P. R. China. sunzx@sust.edu.cn.

Materials horizons
|January 10, 2025
PubMed
概括

这项研究增强了酸酸酸 (BCZT) 薄膜的能量储存,通过战略性地将它们与缺氧的BCZT分层. 这种新的方法,利用Schottky屏障,显著提高了先进电子设备的能量密度和效率.

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